Reverse Biased P-N Junction: When battery connections to the semiconductor are made as p type is connected with negative battery terminal and n type is connected with positive terminal the junction is said to be reverse biased. In this case holes are attracted by the negative battery terminal and electrons by the positive terminal so that both holes and electrons… Read more →
The formation of p-n junction is described below : In actual practice , the characteristic properties of p-n junction will not be apparent if a p type block is just brought in contact with n type block. In fact , p-n junction is fabricated by special techniques .One common method of making p-n junction is called alloying. In this method,… Read more →
Comparison Between Avalanche Breakdown & Zener Breakdown : Zener breakdown This form of breakdown occurs in junctions which , being heavily doped ,have narrow depletion layers. The breakdown voltage set up a very strong electric field(about 108 V/m)across this narrow layer. This field is strong enough to break or rupture the covalent bonds there by generating electron-hole pairs. Even a… Read more →
JFET:Junction field effect transistor is a three terminal semiconductor device in which current conduction is by one type of carrier (i.e., electrons or holes.) The JFET was developed about the same time as the transistor but it came into general use only in the late 1960s. In a JFET, the current conduction is either by electrons or holes and is… Read more →
A FET [ Field Effect Transistor] is a voltage controlled device ,the output characteristics are controlled by input voltage (i.e. electric field) and not by input current. FETs are also known as unipolar transistors .There are two basic types of field effect transistors : 1.Junction Field Effect Transistor ( JFET ) 2.Metal oxide semiconductor Field Effect Transistor (MOSFET) and the improve form of… Read more →